sot-23 plastic-encapsulate transistors MMBT1616 transistor (npn) features z audio frequency power amplifier z medium speed switching marking:16 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10a, i c =0 6 v collector cut-off current i cbo v cb = 60v, i e =0 100 na emitter cut-off current i ebo v eb =6v, i c =0 100 na h fe(1) v ce =2v, i c =100ma 135 600 dc current gain h fe(2) v ce =2v, i c =1a 81 collector-emitter saturation voltage v ce(sat) i c =1a, i b =50ma 0.3 v collector-emitter saturation voltage v be(sat) i c =1a, i b =50ma 1.2 v base-emitter voltage v be v ce =2v, i c =50ma 0.6 0.7 v transition frequency f t v ce =2v,i c =100ma, f=100mhz 100 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 19 pf classification of h fe(1) rank y g l range 135~270 200~400 300~600 symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current 1 a p c collector power dissipation 350 mw r ja thermal resistance from junction to ambient 357 /w t j junction temperature 150 t stg storage temperature -55 +150 sot C 23 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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